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INTELIntel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
  • INTELIntel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

SSDPEKNW020T8X1 A
INTEL
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Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
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Beschreibung

Locatia dispozitivuluiPlug-in Card
Factor de formaM.2 (2280)
Capacitate de stocare2 TB
Suporta canal de datePCIe NVMe 3.0 x4
Tehnologia pentru memorieNAND Flash
Flash Memory Cell TechnologyQuad-Level Cell
Maximum Random Read Rate220000 IOPS
Maximum Random Write Rate220000 IOPS
Maximum Sequential Read Rate1800 MB/s
Maximum Sequential Write Rate1800 MB/s
Total Bytes Written (TBW)200 TB
M.2 Interface Quantity1
Erori nereparabile1 per 10^15
Timpul presupus intre caderi1600000 h
Solid State Drive FeaturesAES 256-bit Encryption
End-to-End Data Protection
Intel Rapid Start Technology
Intel Smart Response Technology
Toleranta la soc in mod operare1000G
Toleranta la soc stocare1000G
Toleranta la vibratii in operare2.17G
Toleranta la vibratii stocare3.13G
Consumul maxim de putere0.1 W
Consumul minim de putere0.04 W
Temperatura maxima de operare a mediului ambiant70 °C
Temperatura ambientala minima de operare0 °C
Produse returnabile aflate in garantieYes
Termen de garantie60 luni
Criterii de validare a garantieiSerial Number
Greutatea bruta a pachetului0.3 kg
Bucati in pachet1
Pachete (colete) in cutie1
Tip pachetRetail
EAN Code5032037131612
Artikeldetails
INTEL
SSDPEKNW020T8X1 A
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Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack

Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
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